PDQ3907 Datasheet, Potens semiconductor

* -30V,-5.5A, RDS(ON) =23mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* MB / VGA / Vc.

SOT23-6 Pin Configuration DS D G D BVDSS -30V RDSON 23m ID -5.5A Features
* -30V,-5.5A, RDS(ON) =23mΩ@VGS .

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.